G3R75MT12J Single FETs, MOSFETs_Lionfly tech_electronic component supplier_capacitor_inductor_potentiometer_optoelectronic device_optical detection equipment_ transformer_oscillator_resonator_relay

Part number：	G3R75MT12J
Product classification：	Single FETs, MOSFETs
Manufacturer：	GeneSiC Semiconductor
Description：	SIC MOSFET N-CH 42A TO263-7
Encapsulation：
Packing：	Tube
Quantity：	2
RoHS status：	YES
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Part number：

G3R75MT12J

Product classification：

Single FETs, MOSFETs

Manufacturer：

GeneSiC Semiconductor

Description：

SIC MOSFET N-CH 42A TO263-7

Encapsulation：

Packing：

Tube

Quantity：

RoHS status：

YES

TYPE	DESCRIPTION
Mfr	GeneSiC Semiconductor
Series	G3R™
Package	Tube
Product Status	OBSOLETE
Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	SiCFET (Silicon Carbide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	42A (Tc)
Rds On (Max) @ Id, Vgs	90mOhm @ 20A, 15V
Power Dissipation (Max)	224W (Tc)
Vgs(th) (Max) @ Id	2.69V @ 7.5mA
Supplier Device Package	TO-263-7
Drive Voltage (Max Rds On, Min Rds On)	15V
Vgs (Max)	±15V
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds	1560 pF @ 800 V

TYPE

DESCRIPTION

Mfr

GeneSiC Semiconductor

Series

G3R™

Package

Tube

Product Status

OBSOLETE

Package / Case

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Mounting Type

Surface Mount

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

SiCFET (Silicon Carbide)

FET Type

N-Channel

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Rds On (Max) @ Id, Vgs

90mOhm @ 20A, 15V

Power Dissipation (Max)

224W (Tc)

Vgs(th) (Max) @ Id

2.69V @ 7.5mA

Supplier Device Package

TO-263-7

Drive Voltage (Max Rds On, Min Rds On)

15V

Vgs (Max)

±15V

Drain to Source Voltage (Vdss)

1200 V

Gate Charge (Qg) (Max) @ Vgs

54 nC @ 15 V

Input Capacitance (Ciss) (Max) @ Vds

1560 pF @ 800 V