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TP65H050G4WS

Part number TP65H050G4WS
Product classification Single FETs, MOSFETs
Manufacturer Transphorm
Description 650 V 34 A GAN FET
Encapsulation
Packing Tube
Quantity 213
RoHS status YES
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Inventory:
Total number

Quantity

Price

Total price

1

$15.0780

$15.0780

30

$12.2010

$366.0300

120

$11.4870

$1,378.4400

510

$10.4055

$5,306.8050

1020

$9.5445

$9,735.3900

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Product parameters
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TYPEDESCRIPTION
MfrTransphorm
SeriesSuperGaN®
PackageTube
Product StatusACTIVE
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Rds On (Max) @ Id, Vgs60mOhm @ 22A, 10V
Power Dissipation (Max)119W (Tc)
Vgs(th) (Max) @ Id4.8V @ 700µA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 400 V

Panasonic Electronic Components
RES SMD 1.1K OHM 5% 1/8W 0805
Panasonic Electronic Components
RES SMD 2.4K OHM 5% 1/8W 0805
Panasonic Electronic Components
RES SMD 1.5K OHM 5% 1/8W 0805
Panasonic Electronic Components
RES SMD 3K OHM 5% 1/8W 0805
Panasonic Electronic Components
RES 68 OHM 5% 3W AXIAL
Panasonic Electronic Components
RES 560 OHM 5% 3W AXIAL
Panasonic Electronic Components
RES 5.1K OHM 5% 3W AXIAL
Panasonic Electronic Components
RES 43K OHM 5% 3W AXIAL
Panasonic Electronic Components
RES 47K OHM 5% 1W AXIAL
Vishay General Semiconductor – Diodes Division
DIODE GEN PURP 800V 12A DO203AA
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