GE12047BCA3
Part number
GE12047BCA3
Product Category
FET, MOSFET Arrays
Manufacturer
GE Aerospace
Description
MOSFET 2N-CH 1200V 475A
Encapsulation
Box
Packing
Quantity
1601
RoHS status
NO
Inventory
Part Status
Active
Mounting Type
Chassis Mount
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
AEC-Q101
Package / Case
Module
Configuration
2 N-Channel (Dual)
Supplier Device Package
Module
Power - Max
1250W
Technology
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
475A
Rds On (Max) @ Id, Vgs
4.4mOhm @ 475A, 20V
Vgs(th) (Max) @ Id
4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs
1248nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds
29300pF @ 600V
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