GE17042BCA3
Part number
GE17042BCA3
Product Category
FET, MOSFET Arrays
Manufacturer
GE Aerospace
Description
MOSFET 2N-CH 1700V 425A MODULE
Encapsulation
Bulk
Packing
Quantity
1601
RoHS status
NO
Share
PDF:
Inventory
Quantity
Price
Total price
1
$2964.5
$2964.5
Part Status
Active
Mounting Type
Chassis Mount
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Qualification
AEC-Q101
Package / Case
Module
Configuration
2 N-Channel (Dual)
Supplier Device Package
Module
Power - Max
1250W
Technology
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C
425A (Tc)
Vgs(th) (Max) @ Id
4.5V @ 160mA
Rds On (Max) @ Id, Vgs
4.45mOhm @ 425A, 20V
Gate Charge (Qg) (Max) @ Vgs
1207nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds
29100pF @ 900V
Newest products
Infineon Technologies
MOSFET N/P-CH 20V 3A/2.5A 8SO
Infineon Technologies
MOSFET 2N-CH 50V 2A 8SO
Diodes Incorporated
MOSFET 2N-CH 60V 1A SM8
onsemi
MOSFET 2N-CH 50V 0.51A SSOT6
onsemi
MOSFET 2P-CH 60V 0.34A SSOT6
onsemi
MOSFET N/P-CH 60V 0.51A SSOT6
onsemi
MOSFET 3N/3P-CH 30V 3A 16SOIC
onsemi
MOSFET 2N-CH 20V 5.5A 8SOIC