GE17080CDA3
Part number
GE17080CDA3
Product Category
FET, MOSFET Arrays
Manufacturer
GE Aerospace
Description
MOSFET 2N-CH 1700V 765A MODULE
Encapsulation
Bulk
Packing
Quantity
1605
RoHS status
NO
Inventory
Part Status
Active
Mounting Type
Chassis Mount
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Qualification
AEC-Q101
Package / Case
Module
Supplier Device Package
Module
Configuration
2 N-Channel (Half Bridge)
Technology
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1700V (1.7kV)
Vgs(th) (Max) @ Id
4.5V @ 160mA
Current - Continuous Drain (Id) @ 25°C
765A
Rds On (Max) @ Id, Vgs
2.23mOhm @ 765A, 20V
Gate Charge (Qg) (Max) @ Vgs
2414nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds
58000pF @ 900V
Power - Max
2350W
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