NH3T008MP120F2
Part number
NH3T008MP120F2
Product Category
FET, MOSFET Arrays
Manufacturer
NoMIS Power
Description
1200 V, 8 m SiC Half-Bridge Powe
Encapsulation
Tray
Packing
Quantity
1609
RoHS status
NO
Inventory
Part Status
Active
Mounting Type
Chassis Mount
Supplier Device Package
-
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
Module
Current - Continuous Drain (Id) @ 25°C
200A (Tc)
Configuration
2 N-Channel (Half Bridge)
Technology
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Vgs(th) (Max) @ Id
4V @ 100mA
Gate Charge (Qg) (Max) @ Vgs
530nC @ 20V
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