TPD3215M
Part number
TPD3215M
Product Category
FET, MOSFET Arrays
Manufacturer
Transphorm
Description
MOSFET 2N-CH 600V 70A MODULE
Encapsulation
Bulk
Packing
Quantity
1600
RoHS status
NO
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Inventory
Part Status
Obsolete
Mounting Type
Through Hole
FET Feature
-
Vgs(th) (Max) @ Id
-
Package / Case
Module
Operating Temperature
-40°C ~ 150°C (TJ)
Supplier Device Package
Module
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Drain to Source Voltage (Vdss)
600V
Configuration
2 N-Channel (Half Bridge)
Technology
GaNFET (Gallium Nitride)
Rds On (Max) @ Id, Vgs
34mOhm @ 30A, 8V
Gate Charge (Qg) (Max) @ Vgs
28nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds
2260pF @ 100V
Power - Max
470W
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