NC1M120C75GTNG
NC1M120C75GTNG
NC1M120C75GTNG
Part Number:
NC1M120C75GTNG
Category:
-
Manufacturer:
Description:
SiC MOSFET N 1200V 75mohm 47A 3
Encapsulation:
Package:
Tube
Quantity:
2400
RoHS Status:
Supported
Share:
PDF:
RFQ
Stock
MOQ: 50
Qty
Price
Total
50+
$16.27
$813.5
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-247-3
Current - Continuous Drain (Id) @ 25°C
47A (Tc)
Drain to Source Voltage (Vdss)
1200 V
Drive Voltage (Max Rds On, Min Rds On)
20V
Technology
SiCFET (Silicon Carbide)
Rds On (Max) @ Id, Vgs
75mOhm @ 20A, 20V
Vgs (Max)
+20V, -5V
Supplier Device Package
TO-247-3L
Vgs(th) (Max) @ Id
2.8V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds
1450 pF @ 1000 V
Power Dissipation (Max)
288W (Ta)
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