TP65H035G4QS
Part Number:
TP65H035G4QS
Category:
-
Manufacturer:
Description:
650 V 46.5 A GAN FET HIGH VOLTAG
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
1649
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$20.58
$20.58
10+
$14.68
$146.8
100+
$13.97
$1397
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Drain to Source Voltage (Vdss)
650 V
Power Dissipation (Max)
156W (Tc)
Technology
GaNFET (Gallium Nitride)
Package / Case
8-PowerSFN
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 400 V
Current - Continuous Drain (Id) @ 25°C
46.5A (Tc)
Rds On (Max) @ Id, Vgs
41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4.8V @ 1mA
Supplier Device Package
TOLL
Latest Products
info@lionfly.com.hk
244423507
0755-8255-7985
17374293080
LinkedIn
Shirley@lionfly.com.hk;Mosica@lionfly.com.hk
Scan QR Code