S2M0016120D
Part Number:
S2M0016120D
Category:
-
Manufacturer:
Description:
DIODE MOSFETS SILICON CARBIDES 1
Encapsulation:
Package:
Tube
Quantity:
0
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$18.82
$18.82
10+
$13.36
$133.6
300+
$10.18
$3054
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
TO-247-3
Supplier Device Package
TO-247AD
Current - Continuous Drain (Id) @ 25°C
140A (Tc)
Drain to Source Voltage (Vdss)
1200 V
Power Dissipation (Max)
714W (Tc)
Technology
SiCFET (Silicon Carbide)
Vgs (Max)
+20V, -5V
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Vgs(th) (Max) @ Id
3.6V @ 23mA
Rds On (Max) @ Id, Vgs
22.3mOhm @ 75A, 20V
Gate Charge (Qg) (Max) @ Vgs
224 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
6680 pF @ 1000 V
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