S3M0016120D
Part Number:
S3M0016120D
Category:
-
Manufacturer:
Description:
MOSFETS SILICON CARBIDES 1200V 1
Encapsulation:
Package:
Tube
Quantity:
0
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$19.13
$19.13
10+
$13.59
$135.9
300+
$10.39
$3117
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
TO-247-3
Supplier Device Package
TO-247AD
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drain to Source Voltage (Vdss)
1200 V
Vgs(th) (Max) @ Id
4V @ 30mA
Technology
SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
23mOhm @ 75A, 18V
Vgs (Max)
+18V, -4V
Gate Charge (Qg) (Max) @ Vgs
287 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
5251 pF @ 1000 V
Power Dissipation (Max)
732W (Tc)
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