S3M0040120K
Part Number:
S3M0040120K
Category:
-
Manufacturer:
Description:
MOSFET SILICON CARBIDE SIC 1200V
Encapsulation:
Package:
Tube
Quantity:
300
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$15.5
$15.5
10+
$10.88
$108.8
300+
$7.92
$2376
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Power Dissipation (Max)
130W (Tc)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
Package / Case
TO-247-4
Technology
SiC (Silicon Carbide Junction Transistor)
Drive Voltage (Max Rds On, Min Rds On)
18V
Supplier Device Package
TO-247-4
Vgs (Max)
+22V, -8V
Rds On (Max) @ Id, Vgs
52mOhm @ 40A, 18V
Vgs(th) (Max) @ Id
4V @ 16mA
Gate Charge (Qg) (Max) @ Vgs
143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
2844 pF @ 1000 V
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