TP65H300G4JSGB-TR
Part Number:
TP65H300G4JSGB-TR
Category:
-
Manufacturer:
Description:
GANFET N-CH 650V 9.2A QFN5X6
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
3875
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$4.74
$4.74
10+
$3.13
$31.3
100+
$2.21
$221
500+
$2.02
$1010
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
9.2A (Tc)
Vgs (Max)
±10V
Drain to Source Voltage (Vdss)
650 V
Gate Charge (Qg) (Max) @ Vgs
3.5 nC @ 10 V
Package / Case
8-PowerTDFN
Power Dissipation (Max)
41.6W (Tc)
Supplier Device Package
8-PQFN (5x6)
Technology
GaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id
2.8V @ 500µA
Drive Voltage (Max Rds On, Min Rds On)
6V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 400 V
Rds On (Max) @ Id, Vgs
312mOhm @ 6.5A, 6V
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