Quantity
Price
Total price
50
$1.8585
$92.9250
TYPE | DESCRIPTION |
Mfr | Toshiba Electronic Devices and Storage Corporation |
Series | - |
Package | Tube |
Product Status | OBSOLETE |
Package / Case | TO-220-3 Full Pack |
Mounting Type | Through Hole |
Operating Temperature | 150°C (TJ) |
Technology | MOSFET (Metal Oxide) |
FET Type | P-Channel |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
Rds On (Max) @ Id, Vgs | 210mOhm @ 6A, 10V |
Power Dissipation (Max) | 35W (Tc) |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Supplier Device Package | TO-220NIS |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Vgs (Max) | ±20V |
Drain to Source Voltage (Vdss) | 100 V |
Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 10 V |