AS1M025120T Single FETs, MOSFETs_Lionfly tech_electronic component supplier_capacitor_inductor_potentiometer_optoelectronic device_optical detection equipment_ transformer_oscillator_resonator_relay

Part number：	AS1M025120T
Product classification：	Single FETs, MOSFETs
Manufacturer：	Anbon Semiconductor
Description：	N-CHANNEL SILICON CARBIDE POWER
Encapsulation：
Packing：	Tube
Quantity：	15
RoHS status：	YES
Share

Part number：

AS1M025120T

Product classification：

Single FETs, MOSFETs

Manufacturer：

Anbon Semiconductor

Description：

N-CHANNEL SILICON CARBIDE POWER

Encapsulation：

Packing：

Tube

Quantity：

RoHS status：

YES

TYPE	DESCRIPTION
Mfr	Anbon Semiconductor
Series	-
Package	Tube
Product Status	ACTIVE
Package / Case	TO-247-4
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	SiCFET (Silicon Carbide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
Rds On (Max) @ Id, Vgs	34mOhm @ 50A, 20V
Power Dissipation (Max)	370W (Tc)
Vgs(th) (Max) @ Id	4V @ 15mA
Supplier Device Package	TO-247-4
Drive Voltage (Max Rds On, Min Rds On)	20V
Vgs (Max)	+25V, -10V
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	195 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds	4200 pF @ 1000 V

TYPE

DESCRIPTION

Mfr

Anbon Semiconductor

Series

Package

Tube

Product Status

ACTIVE

Package / Case

TO-247-4

Mounting Type

Through Hole

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

SiCFET (Silicon Carbide)

FET Type

N-Channel

Current - Continuous Drain (Id) @ 25°C

65A (Tc)

Rds On (Max) @ Id, Vgs

34mOhm @ 50A, 20V

Power Dissipation (Max)

370W (Tc)

Vgs(th) (Max) @ Id

4V @ 15mA

Supplier Device Package

TO-247-4

Drive Voltage (Max Rds On, Min Rds On)

20V

Vgs (Max)

+25V, -10V

Drain to Source Voltage (Vdss)

1200 V

Gate Charge (Qg) (Max) @ Vgs

195 nC @ 20 V

Input Capacitance (Ciss) (Max) @ Vds

4200 pF @ 1000 V