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AS2M040120P

Part number AS2M040120P
Product classification Single FETs, MOSFETs
Manufacturer Anbon Semiconductor
Description N-CHANNEL SILICON CARBIDE POWER
Encapsulation
Packing Bulk
Quantity 50
RoHS status YES
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Inventory:
Total number

Quantity

Price

Total price

1

$21.7245

$21.7245

10

$19.3095

$193.0950

100

$16.8840

$1,688.4000

500

$14.4060

$7,203.0000

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Product parameters
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TYPEDESCRIPTION
MfrAnbon Semiconductor
Series-
PackageBulk
Product StatusACTIVE
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs55mOhm @ 40A, 20V
Power Dissipation (Max)330W (Tc)
Vgs(th) (Max) @ Id4V @ 10mA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)20V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs142 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds2946 pF @ 1000 V

Panasonic Electronic Components
RES SMD 1.1K OHM 5% 1/8W 0805
Panasonic Electronic Components
RES SMD 2.4K OHM 5% 1/8W 0805
Panasonic Electronic Components
RES SMD 1.5K OHM 5% 1/8W 0805
Panasonic Electronic Components
RES SMD 3K OHM 5% 1/8W 0805
Panasonic Electronic Components
RES 68 OHM 5% 3W AXIAL
Panasonic Electronic Components
RES 560 OHM 5% 3W AXIAL
Panasonic Electronic Components
RES 5.1K OHM 5% 3W AXIAL
Panasonic Electronic Components
RES 43K OHM 5% 3W AXIAL
Panasonic Electronic Components
RES 47K OHM 5% 1W AXIAL
Vishay General Semiconductor – Diodes Division
DIODE GEN PURP 800V 12A DO203AA
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