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GP2T080A120H

Part number GP2T080A120H
Product classification Single FETs, MOSFETs
Manufacturer SemiQ
Description SIC MOSFET 1200V 80M TO-247-4L
Encapsulation
Packing Tube
Quantity 13
RoHS status YES
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Inventory:
Total number

Quantity

Price

Total price

1

$11.7600

$11.7600

30

$9.3870

$281.6100

120

$8.4000

$1,008.0000

510

$7.4130

$3,780.6300

1020

$6.6675

$6,800.8500

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Product parameters
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TYPEDESCRIPTION
MfrSemiQ
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Rds On (Max) @ Id, Vgs100mOhm @ 20A, 20V
Power Dissipation (Max)188W (Tc)
Vgs(th) (Max) @ Id4V @ 10mA
Supplier Device PackageTO-247-4
Drive Voltage (Max Rds On, Min Rds On)20V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs61 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds1377 pF @ 1000 V

Panasonic Electronic Components
RES SMD 1.1K OHM 5% 1/8W 0805
Panasonic Electronic Components
RES SMD 2.4K OHM 5% 1/8W 0805
Panasonic Electronic Components
RES SMD 1.5K OHM 5% 1/8W 0805
Panasonic Electronic Components
RES SMD 3K OHM 5% 1/8W 0805
Panasonic Electronic Components
RES 68 OHM 5% 3W AXIAL
Panasonic Electronic Components
RES 560 OHM 5% 3W AXIAL
Panasonic Electronic Components
RES 5.1K OHM 5% 3W AXIAL
Panasonic Electronic Components
RES 43K OHM 5% 3W AXIAL
Panasonic Electronic Components
RES 47K OHM 5% 1W AXIAL
Vishay General Semiconductor – Diodes Division
DIODE GEN PURP 800V 12A DO203AA
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