TP65H050G4YS Single FETs, MOSFETs_Lionfly tech_electronic component supplier_capacitor_inductor_potentiometer_optoelectronic device_optical detection equipment_ transformer_oscillator_resonator_relay

Part number：	TP65H050G4YS
Product classification：	Single FETs, MOSFETs
Manufacturer：	Transphorm
Description：	650 V 35 A GAN FET HIGH VOLTAGE
Encapsulation：
Packing：	Tube
Quantity：	402
RoHS status：	YES
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Part number：

TP65H050G4YS

Product classification：

Single FETs, MOSFETs

Manufacturer：

Transphorm

Description：

650 V 35 A GAN FET HIGH VOLTAGE

Encapsulation：

Packing：

Tube

Quantity：

402

RoHS status：

YES

TYPE	DESCRIPTION
Mfr	Transphorm
Series	SuperGaN®
Package	Tube
Product Status	ACTIVE
Package / Case	TO-247-4
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Rds On (Max) @ Id, Vgs	60mOhm @ 22A, 10V
Power Dissipation (Max)	132W (Tc)
Vgs(th) (Max) @ Id	4.8V @ 700µA
Supplier Device Package	TO-247-4L
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 400 V

TYPE

DESCRIPTION

Mfr

Transphorm

Series

SuperGaN®

Package

Tube

Product Status

ACTIVE

Package / Case

TO-247-4

Mounting Type

Through Hole

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

GaNFET (Gallium Nitride)

FET Type

N-Channel

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Rds On (Max) @ Id, Vgs

60mOhm @ 22A, 10V

Power Dissipation (Max)

132W (Tc)

Vgs(th) (Max) @ Id

4.8V @ 700µA

Supplier Device Package

TO-247-4L

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

650 V

Gate Charge (Qg) (Max) @ Vgs

24 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

1000 pF @ 400 V