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TP65H300G4LSG-TR

Part number TP65H300G4LSG-TR
Product classification Single FETs, MOSFETs
Manufacturer Transphorm
Description GANFET N-CH 650V 6.5A 3PQFN
Encapsulation
Packing Tube
Quantity 6507
RoHS status NO
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Inventory:
Total number

Quantity

Price

Total price

1

$3.7695

$3.7695

10

$3.1605

$31.6050

100

$2.5620

$256.2000

500

$2.2785

$1,139.2500

1000

$1.9425

$1,942.5000

3000

$1.8375

$5,512.5000

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Product parameters
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TYPEDESCRIPTION
MfrTransphorm
Series-
PackageTube
Product StatusACTIVE
Package / Case3-PowerDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6.5A (Tc)
Rds On (Max) @ Id, Vgs312mOhm @ 5A, 8V
Power Dissipation (Max)21W (Tc)
Vgs(th) (Max) @ Id2.6V @ 500µA
Supplier Device Package3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)8V
Vgs (Max)±18V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs9.6 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds760 pF @ 400 V

Panasonic Electronic Components
RES SMD 1.1K OHM 5% 1/8W 0805
Panasonic Electronic Components
RES SMD 2.4K OHM 5% 1/8W 0805
Panasonic Electronic Components
RES SMD 1.5K OHM 5% 1/8W 0805
Panasonic Electronic Components
RES SMD 3K OHM 5% 1/8W 0805
Panasonic Electronic Components
RES 68 OHM 5% 3W AXIAL
Panasonic Electronic Components
RES 560 OHM 5% 3W AXIAL
Panasonic Electronic Components
RES 5.1K OHM 5% 3W AXIAL
Panasonic Electronic Components
RES 43K OHM 5% 3W AXIAL
Panasonic Electronic Components
RES 47K OHM 5% 1W AXIAL
Vishay General Semiconductor – Diodes Division
DIODE GEN PURP 800V 12A DO203AA
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