TP90H050WS Single FETs, MOSFETs_Lionfly tech_electronic component supplier_capacitor_inductor_potentiometer_optoelectronic device_optical detection equipment_ transformer_oscillator_resonator_relay

Part number：	TP90H050WS
Product classification：	Single FETs, MOSFETs
Manufacturer：	Transphorm
Description：	GANFET N-CH 900V 34A TO247-3
Encapsulation：
Packing：	Tube
Quantity：	107
RoHS status：	NO
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Part number：

TP90H050WS

Product classification：

Single FETs, MOSFETs

Manufacturer：

Transphorm

Description：

GANFET N-CH 900V 34A TO247-3

Encapsulation：

Packing：

Tube

Quantity：

107

RoHS status：

TYPE	DESCRIPTION
Mfr	Transphorm
Series	-
Package	Tube
Product Status	OBSOLETE
Package / Case	TO-247-3
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C
Technology	GaNFET (Cascode Gallium Nitride FET)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Rds On (Max) @ Id, Vgs	63mOhm @ 22A, 10V
Power Dissipation (Max)	119W (Tc)
Vgs(th) (Max) @ Id	4.4V @ 700µA
Supplier Device Package	TO-247-3
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	900 V
Gate Charge (Qg) (Max) @ Vgs	17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	980 pF @ 600 V

TYPE

DESCRIPTION

Mfr

Transphorm

Series

Package

Tube

Product Status

OBSOLETE

Package / Case

TO-247-3

Mounting Type

Through Hole

Operating Temperature

-55°C ~ 150°C

Technology

GaNFET (Cascode Gallium Nitride FET)

FET Type

N-Channel

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Rds On (Max) @ Id, Vgs

63mOhm @ 22A, 10V

Power Dissipation (Max)

119W (Tc)

Vgs(th) (Max) @ Id

4.4V @ 700µA

Supplier Device Package

TO-247-3

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

900 V

Gate Charge (Qg) (Max) @ Vgs

17.5 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

980 pF @ 600 V