IRFD110
Part number
IRFD110
Product Category
Single FETs, MOSFETs
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 100V 1A 4DIP
Encapsulation
Bulk
Packing
Quantity
1600
RoHS status
NO
Inventory
Minimum : 0
Quantity
Price
Total price
Part Status
Obsolete
Mounting Type
Through Hole
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 25 V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Supplier Device Package
4-HVMDIP
Package / Case
4-DIP (0.300", 7.62mm)
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
Rds On (Max) @ Id, Vgs
540mOhm @ 600mA, 10V
Power Dissipation (Max)
1.3W (Ta)
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