IRFD210
Part number
IRFD210
Product Category
Single FETs, MOSFETs
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 200V 600MA 4DIP
Encapsulation
Tube
Packing
Quantity
1600
RoHS status
NO
Inventory
Minimum : 0
Quantity
Price
Total price
Part Status
Obsolete
Mounting Type
Through Hole
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
200 V
Power Dissipation (Max)
1W (Ta)
Supplier Device Package
4-HVMDIP
Package / Case
4-DIP (0.300", 7.62mm)
Current - Continuous Drain (Id) @ 25°C
600mA (Ta)
Rds On (Max) @ Id, Vgs
1.5Ohm @ 360mA, 10V
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 25 V
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