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NXH003P120M3F2PTNG

Part number NXH003P120M3F2PTNG
Product classification FET, MOSFET Arrays
Manufacturer Sanyo Semiconductor/onsemi
Description SILICON CARBIDE (SIC) MODULE EL
Encapsulation
Packing Tray
Quantity 20
RoHS status YES
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Total number

Quantity

Price

Total price

1

$271.6560

$271.6560

20

$254.4360

$5,088.7200

40

$244.8705

$9,794.8200

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Product parameters
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TYPEDESCRIPTION
MfrSanyo Semiconductor/onsemi
Series-
PackageTray
Product StatusACTIVE
Package / CaseModule
Mounting TypeChassis Mount
Configuration2 N-Channel (Half Bridge)
Operating Temperature-40°C ~ 150°C (TJ)
TechnologySilicon Carbide (SiC)
Power - Max1.48kW (Tj)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C435A (Tj)
Input Capacitance (Ciss) (Max) @ Vds20889pF @ 800V
Rds On (Max) @ Id, Vgs5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs1200nC @ 20V
Vgs(th) (Max) @ Id4.4V @ 160mA
Supplier Device Package36-PIM (56.7x62.8)

Panasonic Electronic Components
RES SMD 1.1K OHM 5% 1/8W 0805
Panasonic Electronic Components
RES SMD 2.4K OHM 5% 1/8W 0805
Panasonic Electronic Components
RES SMD 1.5K OHM 5% 1/8W 0805
Panasonic Electronic Components
RES SMD 3K OHM 5% 1/8W 0805
Panasonic Electronic Components
RES 68 OHM 5% 3W AXIAL
Panasonic Electronic Components
RES 560 OHM 5% 3W AXIAL
Panasonic Electronic Components
RES 5.1K OHM 5% 3W AXIAL
Panasonic Electronic Components
RES 43K OHM 5% 3W AXIAL
Panasonic Electronic Components
RES 47K OHM 5% 1W AXIAL
Vishay General Semiconductor – Diodes Division
DIODE GEN PURP 800V 12A DO203AA
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