2301H
Part number
2301H
Product Category
Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Description
P30V,RD(MAX)<130M@-4.5V,RD(MAX)<
Encapsulation
Cut Tape (CT)
Packing
Quantity
4351
RoHS status
NO
Inventory
Minimum : 1
Quantity
Price
Total price
1
$0.29
$0.29
10
$0.17
$1.7
100
$0.11
$11
500
$0.08
$40
1000
$0.07
$70
Part Status
Active
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3
FET Type
P-Channel
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
30 V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Rds On (Max) @ Id, Vgs
75mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C
2.8A (Tc)
Gate Charge (Qg) (Max) @ Vgs
4.5 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds
366 pF @ 15 V
Power Dissipation (Max)
890mW (Tc)
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