AS1M025120T
Part number
AS1M025120T
Product Category
Single FETs, MOSFETs
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITED
Description
N-CHANNEL SILICON CARBIDE POWER
Encapsulation
Tube
Packing
Quantity
1613
RoHS status
NO
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Inventory
Quantity
Quantity
Price
Total price
1
$40.49
$40.49
30
$26.84
$805.2
120
$26.84
$3220.8
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
370W (Tc)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
Package / Case
TO-247-4
Drive Voltage (Max Rds On, Min Rds On)
20V
Technology
SiCFET (Silicon Carbide)
Vgs (Max)
+25V, -10V
Rds On (Max) @ Id, Vgs
34mOhm @ 50A, 20V
Supplier Device Package
TO-247-4
Vgs(th) (Max) @ Id
4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
195 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
4200 pF @ 1000 V
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