AS1M080120P
Part number
AS1M080120P
Product Category
Single FETs, MOSFETs
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITED
Description
N-CHANNEL SILICON CARBIDE POWER
Encapsulation
Tube
Packing
Quantity
1604
RoHS status
NO
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Inventory
Quantity
Quantity
Price
Total price
1
$14.81
$14.81
30
$8.99
$269.7
120
$7.71
$925.2
510
$7.46
$3804.6
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-247-3
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
Supplier Device Package
TO-247-3
Gate Charge (Qg) (Max) @ Vgs
79 nC @ 20 V
Drain to Source Voltage (Vdss)
1200 V
Power Dissipation (Max)
192W (Tc)
Vgs(th) (Max) @ Id
4V @ 5mA
Drive Voltage (Max Rds On, Min Rds On)
20V
Technology
SiCFET (Silicon Carbide)
Rds On (Max) @ Id, Vgs
98mOhm @ 20A, 20V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1475 pF @ 1000 V
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