AS2312
Part number
AS2312
Product Category
Single FETs, MOSFETs
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITED
Description
N-CHANNEL ENHANCEMENT MODE MOSFE
Encapsulation
Cut Tape (CT)
Packing
Quantity
12057
RoHS status
NO
Share
PDF:
Inventory
Minimum : 1
Quantity
Price
Total price
1
$0.25
$0.25
10
$0.16
$1.6
100
$0.1
$10
500
$0.07
$35
1000
$0.06
$60
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
FET Feature
-
Grade
-
Qualification
-
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
150°C (TJ)
Vgs (Max)
±10V
Vgs(th) (Max) @ Id
1V @ 250µA
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
6.8A (Ta)
Power Dissipation (Max)
1.2W (Ta)
Supplier Device Package
SOT-23
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
18mOhm @ 6.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs
11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
888 pF @ 10 V
Newest products
Vishay Siliconix
MOSFET N-CH 100V 5.6A TO220AB
Vishay Siliconix
MOSFET P-CH 100V 4A TO220AB
Vishay Siliconix
MOSFET P-CH 200V 560MA 4DIP
Vishay Siliconix
MOSFET N-CH 500V 8A TO220AB
Vishay Siliconix
MOSFET N-CH 100V 1A 4DIP
Vishay Siliconix
MOSFET P-CH 60V 600MA 4DIP
Vishay Siliconix
MOSFET N-CH 200V 600MA 4DIP
Vishay Siliconix
MOSFET P-CH 100V 700MA 4DIP