AS2M040120P
Part number
AS2M040120P
Product Category
Single FETs, MOSFETs
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITED
Description
N-CHANNEL SILICON CARBIDE POWER
Encapsulation
Bulk
Packing
Quantity
1650
RoHS status
NO
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Inventory
Minimum : 1
Quantity
Price
Total price
1
$24.96
$24.96
30
$15.86
$475.8
120
$14.6
$1752
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drain to Source Voltage (Vdss)
1200 V
Power Dissipation (Max)
330W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Vgs(th) (Max) @ Id
4V @ 10mA
Technology
SiCFET (Silicon Carbide)
Vgs (Max)
+25V, -10V
Rds On (Max) @ Id, Vgs
55mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs
142 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
2946 pF @ 1000 V
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