CGD65A130S2-T13
Part number
CGD65A130S2-T13
Product Category
Single FETs, MOSFETs
Manufacturer
Cambridge GaN Devices
Description
650V GAN HEMT, 130MOHM, DFN8X8.
Encapsulation
Cut Tape (CT)
Packing
Quantity
4906
RoHS status
NO
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Inventory
Minimum : 1
Quantity
Price
Total price
1
$8.45
$8.45
10
$5.73
$57.3
100
$4.38
$438
Part Status
Active
Mounting Type
Surface Mount
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drain to Source Voltage (Vdss)
650 V
FET Type
-
FET Feature
Current Sensing
Drive Voltage (Max Rds On, Min Rds On)
12V
Technology
GaNFET (Gallium Nitride)
Rds On (Max) @ Id, Vgs
182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id
4.2V @ 4.2mA
Gate Charge (Qg) (Max) @ Vgs
2.3 nC @ 12 V
Vgs (Max)
+20V, -1V
Supplier Device Package
16-DFN (8x8)
Package / Case
16-PowerVDFN
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