CGD65A130SH2
Part number
CGD65A130SH2
Product Category
Single FETs, MOSFETs
Manufacturer
Cambridge GaN Devices
Description
650V GAN HEMT, 130MOHM, DFN8X8.
Encapsulation
Cut Tape (CT)
Packing
Quantity
5013
RoHS status
NO
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Inventory
Quantity
Quantity
Price
Total price
1
$8.31
$8.31
10
$5.63
$56.3
100
$4.27
$427
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
-
Drain to Source Voltage (Vdss)
650 V
Drive Voltage (Max Rds On, Min Rds On)
12V
Technology
GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C
12A
Rds On (Max) @ Id, Vgs
182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id
4.2V @ 4.2mA
Vgs (Max)
+20V, -1V
Supplier Device Package
16-DFN (8x8)
Package / Case
16-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs
1.9 nC @ 12 V
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