CGD65B130S2-T13
Part number
CGD65B130S2-T13
Product Category
Single FETs, MOSFETs
Manufacturer
Cambridge GaN Devices
Description
650V GAN HEMT, 130MOHM, DFN5X6.
Encapsulation
Cut Tape (CT)
Packing
Quantity
6455
RoHS status
NO
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Inventory
Quantity
Quantity
Price
Total price
1
$7.95
$7.95
10
$5.38
$53.8
100
$4.04
$404
Part Status
Active
Mounting Type
Surface Mount
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drain to Source Voltage (Vdss)
650 V
FET Type
-
Supplier Device Package
8-DFN (5x6)
Package / Case
8-PowerVDFN
FET Feature
Current Sensing
Technology
GaNFET (Gallium Nitride)
Rds On (Max) @ Id, Vgs
182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id
4.2V @ 4.2mA
Gate Charge (Qg) (Max) @ Vgs
2.3 nC @ 12 V
Vgs (Max)
+20V, -1V
Drive Voltage (Max Rds On, Min Rds On)
9V, 20V
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