CGD65B200S2-T13
Part number
CGD65B200S2-T13
Product Category
Single FETs, MOSFETs
Manufacturer
Cambridge GaN Devices
Description
650V GAN HEMT, 200MOHM, DFN5X6.
Encapsulation
Cut Tape (CT)
Packing
Quantity
5739
RoHS status
NO
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Inventory
Quantity
Quantity
Price
Total price
1
$6.15
$6.15
10
$4.1
$41
100
$2.94
$294
500
$2.86
$1430
Part Status
Active
Mounting Type
Surface Mount
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
8.5A (Tc)
FET Type
-
Supplier Device Package
8-DFN (5x6)
Package / Case
8-PowerVDFN
FET Feature
Current Sensing
Technology
GaNFET (Gallium Nitride)
Vgs (Max)
+20V, -1V
Drive Voltage (Max Rds On, Min Rds On)
9V, 20V
Rds On (Max) @ Id, Vgs
280mOhm @ 600mA, 12V
Vgs(th) (Max) @ Id
4.2V @ 2.75mA
Gate Charge (Qg) (Max) @ Vgs
1.4 nC @ 12 V
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