CGD65B240SH2
Part number
CGD65B240SH2
Product Category
Single FETs, MOSFETs
Manufacturer
Cambridge GaN Devices
Description
650V GAN HEMT, 240MOHM, DFN5X6.
Encapsulation
Cut Tape (CT)
Packing
Quantity
6255
RoHS status
NO
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Inventory
Quantity
Quantity
Price
Total price
1
$5.93
$5.93
10
$3.95
$39.5
100
$2.83
$283
500
$2.73
$1365
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
-
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
7A
Supplier Device Package
8-DFN (5x6)
Package / Case
8-PowerVDFN
Drive Voltage (Max Rds On, Min Rds On)
12V
Technology
GaNFET (Gallium Nitride)
Vgs (Max)
+20V, -1V
Rds On (Max) @ Id, Vgs
336mOhm @ 500mA, 12V
Vgs(th) (Max) @ Id
4.2V @ 2.3mA
Gate Charge (Qg) (Max) @ Vgs
1.2 nC @ 12 V
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