EPC2012
Part number
EPC2012
Product Category
Single FETs, MOSFETs
Manufacturer
EPC
Description
GANFET N-CH 200V 3A DIE
Encapsulation
Tape & Reel (TR)
Packing
Quantity
1600
RoHS status
NO
Inventory
Minimum : 0
Quantity
Price
Total price
Part Status
Discontinued at
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-40°C ~ 125°C (TJ)
Drain to Source Voltage (Vdss)
200 V
Power Dissipation (Max)
-
Vgs(th) (Max) @ Id
2.5V @ 1mA
Drive Voltage (Max Rds On, Min Rds On)
5V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)
Package / Case
Die
Supplier Device Package
Die
Gate Charge (Qg) (Max) @ Vgs
1.8 nC @ 5 V
Technology
GaNFET (Gallium Nitride)
Vgs (Max)
+6V, -5V
Rds On (Max) @ Id, Vgs
100mOhm @ 3A, 5V
Input Capacitance (Ciss) (Max) @ Vds
145 pF @ 100 V
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