EPC7014UBC
Part number
EPC7014UBC
Product Category
Single FETs, MOSFETs
Manufacturer
EPC Space, LLC
Description
GAN FET HEMT 60V 1A COTS 4UB
Encapsulation
Bulk
Packing
Quantity
1690
RoHS status
NO
Share
PDF:
Inventory
Minimum : 1
Quantity
Price
Total price
1
$200.08
$200.08
10
$184.4
$1844
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
60 V
Power Dissipation (Max)
-
Supplier Device Package
4-SMD
Drive Voltage (Max Rds On, Min Rds On)
5V
Package / Case
4-SMD, No Lead
Current - Continuous Drain (Id) @ 25°C
1A (Tc)
Technology
GaNFET (Gallium Nitride)
Rds On (Max) @ Id, Vgs
580mOhm @ 1A, 5V
Vgs(th) (Max) @ Id
2.5V @ 140µA
Vgs (Max)
+7V, -4V
Input Capacitance (Ciss) (Max) @ Vds
22 pF @ 30 V
Newest products
Vishay Siliconix
MOSFET N-CH 100V 5.6A TO220AB
Vishay Siliconix
MOSFET P-CH 100V 4A TO220AB
Vishay Siliconix
MOSFET P-CH 200V 560MA 4DIP
Vishay Siliconix
MOSFET N-CH 500V 8A TO220AB
Vishay Siliconix
MOSFET N-CH 100V 1A 4DIP
Vishay Siliconix
MOSFET P-CH 60V 600MA 4DIP
Vishay Siliconix
MOSFET N-CH 200V 600MA 4DIP
Vishay Siliconix
MOSFET P-CH 100V 700MA 4DIP