FDD6676AS
Part number
FDD6676AS
Product Category
Single FETs, MOSFETs
Manufacturer
Fairchild Semiconductor
Description
MOSFET N-CH 30V 90A TO252
Encapsulation
Bulk
Packing
Quantity
210910
RoHS status
NO
Share
PDF:
Inventory
Minimum : 251
Quantity
Price
Total price
251
$1.32
$331.32
Part Status
Obsolete
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id
3V @ 1mA
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
30 V
Gate Charge (Qg) (Max) @ Vgs
64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 15 V
Supplier Device Package
TO-252 (DPAK)
Current - Continuous Drain (Id) @ 25°C
90A (Ta)
Power Dissipation (Max)
70W (Ta)
Rds On (Max) @ Id, Vgs
5.7mOhm @ 16A, 10V
Newest products
Vishay Siliconix
MOSFET N-CH 100V 5.6A TO220AB
Vishay Siliconix
MOSFET P-CH 100V 4A TO220AB
Vishay Siliconix
MOSFET P-CH 200V 560MA 4DIP
Vishay Siliconix
MOSFET N-CH 500V 8A TO220AB
Vishay Siliconix
MOSFET N-CH 100V 1A 4DIP
Vishay Siliconix
MOSFET P-CH 60V 600MA 4DIP
Vishay Siliconix
MOSFET N-CH 200V 600MA 4DIP
Vishay Siliconix
MOSFET P-CH 100V 700MA 4DIP