G01N20LE
Part number
G01N20LE
Product Category
Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Description
N200V,RD(MAX)<850M@10V,RD(MAX)<9
Encapsulation
Cut Tape (CT)
Packing
Quantity
2418
RoHS status
NO
Inventory
Minimum : 1
Quantity
Price
Total price
1
$0.58
$0.58
10
$0.36
$3.6
100
$0.23
$23
500
$0.17
$85
1000
$0.15
$150
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3
Drain to Source Voltage (Vdss)
200 V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
1.7A (Tc)
Power Dissipation (Max)
1.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds
580 pF @ 25 V
Rds On (Max) @ Id, Vgs
700mOhm @ 1A, 10V
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