G3035L
Part number
G3035L
Product Category
Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Description
P30V,RD(MAX)<59M@-10V,RD(MAX)<75
Encapsulation
Cut Tape (CT)
Packing
Quantity
4335
RoHS status
NO
Inventory
Quantity
Quantity
Price
Total price
1
$0.4
$0.4
10
$0.24
$2.4
100
$0.15
$15
500
$0.11
$55
1000
$0.1
$100
Part Status
Active
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3
FET Type
P-Channel
Vgs(th) (Max) @ Id
2V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
30 V
Input Capacitance (Ciss) (Max) @ Vds
650 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
12.5 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C
4.1A (Ta)
Rds On (Max) @ Id, Vgs
59mOhm @ 2.1A, 10V
Power Dissipation (Max)
1.4W (Tc)
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