GPIHV10DK
Part number
GPIHV10DK
Product Category
Single FETs, MOSFETs
Manufacturer
GaNPower
Description
GaNFET N-CH 1200V 10A TO252
Encapsulation
Tape & Reel (TR)
Packing
Quantity
1600
RoHS status
NO
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Quantity
Price
Total price
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
10A
Technology
GaNFET (Gallium Nitride)
Drive Voltage (Max Rds On, Min Rds On)
6V
Vgs (Max)
+7.5V, -12V
Gate Charge (Qg) (Max) @ Vgs
3.5 nC @ 6 V
Vgs(th) (Max) @ Id
1.7V @ 3.5mA
Input Capacitance (Ciss) (Max) @ Vds
105 pF @ 700 V
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