GPIHV30SB5L
Part number
GPIHV30SB5L
Product Category
Single FETs, MOSFETs
Manufacturer
GaNPower
Description
GANFET N-CH 1200V 30A TO263-5L
Encapsulation
Tube
Packing
Quantity
1600
RoHS status
NO
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Inventory
Quantity
Price
Total price
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
-
Package / Case
Die
Supplier Device Package
Die
Drain to Source Voltage (Vdss)
1200 V
Technology
GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C
30A
Drive Voltage (Max Rds On, Min Rds On)
6V
Vgs (Max)
+7.5V, -12V
Vgs(th) (Max) @ Id
1.4V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs
8.25 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds
236 pF @ 400 V
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