GT110N06S
Part number
GT110N06S
Product Category
Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Description
N60V,RD(MAX)<15M@-4.5V,RD(MAX)<1
Encapsulation
Cut Tape (CT)
Packing
Quantity
5133
RoHS status
NO
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Inventory
Quantity
Price
Total price
1
$1.25
$1.25
10
$0.78
$7.8
100
$0.51
$51
500
$0.4
$200
1000
$0.36
$360
2000
$0.33
$660
Part Status
Active
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
14A (Tc)
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Supplier Device Package
8-SOP
Vgs(th) (Max) @ Id
2.4V @ 250µA
Power Dissipation (Max)
3W (Tc)
Rds On (Max) @ Id, Vgs
11mOhm @ 14A, 10V
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