GT52N10D5
Part number
GT52N10D5
Product Category
Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Description
N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
Encapsulation
Cut Tape (CT)
Packing
Quantity
13359
RoHS status
NO
Inventory
Quantity
Quantity
Price
Total price
1
$2.52
$2.52
10
$1.61
$16.1
100
$1.1
$110
500
$0.88
$440
1000
$0.85
$850
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id
2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Power Dissipation (Max)
100W (Tc)
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Package / Case
8-PowerTDFN
Current - Continuous Drain (Id) @ 25°C
71A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
2870 pF @ 50 V
Rds On (Max) @ Id, Vgs
7.5mOhm @ 50A, 10V
Supplier Device Package
8-DFN (4.9x5.75)
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