IV1Q12050T3
Part number
IV1Q12050T3
Product Category
Single FETs, MOSFETs
Manufacturer
Inventchip
Description
SIC MOSFET, 1200V 50MOHM, TO-247
Encapsulation
Tube
Packing
Quantity
1600
RoHS status
NO
PDF：
Inventory
Minimum : 120
Quantity
Price
Total price
120
$7.98
$957.6
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
TO-247-3
Current - Continuous Drain (Id) @ 25°C
58A (Tc)
Supplier Device Package
TO-247-3
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 20 V
Drain to Source Voltage (Vdss)
1200 V
Drive Voltage (Max Rds On, Min Rds On)
20V
Technology
SiCFET (Silicon Carbide)
Power Dissipation (Max)
327W (Tc)
Vgs (Max)
+20V, -5V
Rds On (Max) @ Id, Vgs
65mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
3.2V @ 6mA
Input Capacitance (Ciss) (Max) @ Vds
2770 pF @ 800 V
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