N3T035MP120D
Part number
N3T035MP120D
Product Category
Single FETs, MOSFETs
Manufacturer
NoMIS Power
Description
1200 V, 35 m SiC MOSFET, TO-247-
Encapsulation
Tube
Packing
Quantity
2252
RoHS status
NO
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Inventory
Quantity
Quantity
Price
Total price
1
$18.65
$18.65
25
$16.45
$411.25
100
$15.35
$1535
500
$14.25
$7125
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
TO-247-3
Drain to Source Voltage (Vdss)
1200 V
Drive Voltage (Max Rds On, Min Rds On)
20V
Technology
SiCFET (Silicon Carbide)
Vgs (Max)
+20V, -5V
Rds On (Max) @ Id, Vgs
45mOhm @ 30A, 20V
Power Dissipation (Max)
319W (Tc)
Supplier Device Package
TO-247-3L
Vgs(th) (Max) @ Id
3V @ 15mA
Current - Continuous Drain (Id) @ 25°C
76A
Gate Charge (Qg) (Max) @ Vgs
126 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
2204 pF @ 800 V
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