N3T080MP120D
Part number
N3T080MP120D
Product Category
Single FETs, MOSFETs
Manufacturer
NoMIS Power
Description
1200 V, 80 m SiC MOSFET, TO-247-
Encapsulation
Tube
Packing
Quantity
2482
RoHS status
NO
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Inventory
Minimum : 1
Quantity
Price
Total price
1
$9.85
$9.85
25
$9.3
$232.5
100
$8.75
$875
500
$7.65
$3825
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
TO-247-3
Drain to Source Voltage (Vdss)
1200 V
Power Dissipation (Max)
188W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Current - Continuous Drain (Id) @ 25°C
38A
Technology
SiCFET (Silicon Carbide)
Rds On (Max) @ Id, Vgs
100mOhm @ 15A, 20V
Vgs (Max)
+20V, -5V
Supplier Device Package
TO-247-3L
Vgs(th) (Max) @ Id
3V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
896 pF @ 800 V
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