NC1M120C12HTNG
Part number
NC1M120C12HTNG
Product Category
Single FETs, MOSFETs
Manufacturer
NovuSem
Description
SiC MOSFET N 1200V 12mohm 214A
Encapsulation
Tube
Packing
Quantity
1700
RoHS status
NO
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Inventory
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
1200 V
Package / Case
TO-247-4
Supplier Device Package
TO-247-4L
Drive Voltage (Max Rds On, Min Rds On)
20V
Technology
SiCFET (Silicon Carbide)
Rds On (Max) @ Id, Vgs
20mOhm @ 100A, 20V
Vgs (Max)
+20V, -5V
Current - Continuous Drain (Id) @ 25°C
214A (Tc)
Vgs(th) (Max) @ Id
3.5V @ 40mA
Input Capacitance (Ciss) (Max) @ Vds
8330 pF @ 1000 V
Power Dissipation (Max)
938W (Ta)
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