P3M06060G7
Part number
P3M06060G7
Product Category
Single FETs, MOSFETs
Manufacturer
PN Junction Semiconductor
Description
SICFET N-CH 650V 44A TO-263-7
Encapsulation
Tape & Reel (TR)
Packing
Quantity
1600
RoHS status
NO
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Inventory
Minimum : 0
Quantity
Price
Total price
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
D2PAK-7
Drive Voltage (Max Rds On, Min Rds On)
15V
Technology
SiCFET (Silicon Carbide)
Power Dissipation (Max)
159W
Vgs (Max)
+20V, -8V
Current - Continuous Drain (Id) @ 25°C
44A
Rds On (Max) @ Id, Vgs
79mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
2.2V @ 20mA (Typ)
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