P3M06060T3
Part number
P3M06060T3
Product Category
Single FETs, MOSFETs
Manufacturer
PN Junction Semiconductor
Description
SICFET N-CH 650V 46A TO220-3
Encapsulation
Tube
Packing
Quantity
1600
RoHS status
NO
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Quantity
Price
Total price
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Package / Case
TO-220-2
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
TO-220-2L
Drive Voltage (Max Rds On, Min Rds On)
15V
Current - Continuous Drain (Id) @ 25°C
46A
Technology
SiCFET (Silicon Carbide)
Power Dissipation (Max)
170W
Vgs (Max)
+20V, -8V
Rds On (Max) @ Id, Vgs
79mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
2.2V @ 20mA (Typ)
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