P3M12025K4
Part number
P3M12025K4
Product Category
Single FETs, MOSFETs
Manufacturer
PN Junction Semiconductor
Description
SICFET N-CH 1200V 112A TO-247-4
Encapsulation
Tube
Packing
Quantity
1600
RoHS status
NO
PDF：
Inventory
Minimum : 0
Quantity
Price
Total price
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Drain to Source Voltage (Vdss)
1200 V
Package / Case
TO-247-4
Supplier Device Package
TO-247-4L
Drive Voltage (Max Rds On, Min Rds On)
15V
Current - Continuous Drain (Id) @ 25°C
112A
Technology
SiCFET (Silicon Carbide)
Vgs (Max)
+19V, -8V
Rds On (Max) @ Id, Vgs
35mOhm @ 50A, 15V
Vgs(th) (Max) @ Id
2.2V @ 50mA (Typ)
Power Dissipation (Max)
577W
Newest products
Vishay Siliconix
Vishay Siliconix
Vishay Siliconix
Vishay Siliconix
Vishay Siliconix
Vishay Siliconix
Vishay Siliconix
Vishay Siliconix
info@lionfly.com.hk
244423507
Mobile QR Code