P3M12160K3
Part number
P3M12160K3
Product Category
Single FETs, MOSFETs
Manufacturer
PN Junction Semiconductor
Description
SICFET N-CH 1200V 19A TO-247-3
Encapsulation
Tube
Packing
Quantity
1600
RoHS status
NO
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Inventory
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Package / Case
TO-247-3
Drain to Source Voltage (Vdss)
1200 V
Drive Voltage (Max Rds On, Min Rds On)
15V
Technology
SiCFET (Silicon Carbide)
Power Dissipation (Max)
110W
Current - Continuous Drain (Id) @ 25°C
19A
Rds On (Max) @ Id, Vgs
192mOhm @ 10A, 15V
Supplier Device Package
TO-247-3L
Vgs (Max)
+21V, -8V
Vgs(th) (Max) @ Id
2.4V @ 2.5mA (Typ)
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